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JANSD2N2221AUA - BJT( BiPolar Junction Transistor)

JANSD2N2221AUA_8911265.PDF Datasheet


Part No.	JANSD2N2221AUA JANSD2N2221AL JANSG2N2221A JANSG2N2221AL JANSG2N2221AUA JANSG2N2221AUB JANSG2N2221AUBC JANSG2N2222AL JANSG2N2222AUA JANSG2N2222AUB JANSG2N2222AUBC JANSM2N2221AL JANSM2N2221AUB JANSM2N2222A JANSM2N2222AL JANSM2N2222AUA JANSM2N2222AUB JANSR2N2221A JANSR2N2222A JANSR2N2222AL JANSR2N2221AUBC JANSR2N2222AUBC JANSR2N2221AL JANSR2N2221AUA JANSR2N2222AUA JANSP2N2221A JANSP2N2221AL JANSP2N2221AUA JANSP2N2221AUB JANSP2N2221AUBC JANSP2N2222A
Description	BJT( BiPolar Junction Transistor)
File Size	128.99K / 7 Page
Maker	Microsemi
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Related Part Number

PART	Description	Maker
2N7370E3	BJT( BiPolar Junction Transistor)	Microsemi
2N4234E3 2N4236E3	BJT( BiPolar Junction Transistor)	Microsemi
30KW258A 30KW168 30KW168A 30KW216 30KW240 30KW240A	258.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 168.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 216.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 240.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 120.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 198.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 270.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 156.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 132.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 144.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 288.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 102.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications	MDE Semiconductor
SD965	Bipolar Junction Transistor	Sinyork
MJH16002A MJH16004	Bipolar Junction Transistor NPN SILICON POWER TRANSISTORS	New Jersey Semiconductors New Jersey Semi-Conductor P...
2SD1468S 2SD1834 2SD1834T100W 2SD1468STPR 2SD1468S	1000 mA, 15 V, NPN, Si, SMALL SIGNAL TRANSISTOR Transistors > Small Signal Bipolar Transistors(up to 0.6W) Transistors > Medium Power Bipolar Transistors(0.5W-1.0W) BJT Low-Power, Single/Dual-Level Battery Monitors with Hysteresis 晶体	ROHM
151-05 151-08 151-07 151-09 152-05 164-18 164-04 1	TRANSISTOR \| BJT \| NPN \| 50V V(BR)CEO \| 6A I(C) \| TO-82 TRANSISTOR \| BJT \| NPN \| 80V V(BR)CEO \| 6A I(C) \| TO-82 TRANSISTOR \| BJT \| NPN \| 70V V(BR)CEO \| 6A I(C) \| TO-82 TRANSISTOR \| BJT \| NPN \| 90V V(BR)CEO \| 6A I(C) \| TO-82 TRANSISTOR \| BJT \| NPN \| 180V V(BR)CEO \| 20A I(C) \| STR-5/16 TRANSISTOR \| BJT \| NPN \| 40V V(BR)CEO \| 20A I(C) \| STR-5/16 TRANSISTOR \| BJT \| NPN \| 100V V(BR)CEO \| 20A I(C) \| STR-5/16 TRANSISTOR \| BJT \| NPN \| 160V V(BR)CEO \| 6A I(C) \| TO-82 5-Pin µP Supervisory Circuits with Watchdog and Manual Reset TRANSISTOR \| BJT \| NPN \| 50V V(BR)CEO \| 7.5A I(C) \| STR-1/4 TRANSISTOR \| BJT \| NPN \| 60V V(BR)CEO \| 6A I(C) \| TO-82 TRANSISTOR \| BJT \| NPN \| 100V V(BR)CEO \| 6A I(C) \| TO-82 TRANSISTOR \| BJT \| NPN \| 220V V(BR)CEO \| 6A I(C) \| TO-82 TRANSISTOR \| BJT \| NPN \| 90V V(BR)CEO \| 7.5A I(C) \| STR-1/4 TRANSISTOR \| BJT \| NPN \| 60V V(BR)CEO \| 7.5A I(C) \| STR-1/4 TRANSISTOR \| BJT \| NPN \| 140V V(BR)CEO \| 20A I(C) \| STR-5/16 TRANSISTOR \| BJT \| NPN \| 70V V(BR)CEO \| 7.5A I(C) \| STR-1/4 TRANSISTOR \| BJT \| NPN \| 80V V(BR)CEO \| 7.5A I(C) \| STR-1/4 TRANSISTOR \| BJT \| NPN \| 80V V(BR)CEO \| 20A I(C) \| STR-5/16 TRANSISTOR \| BJT \| NPN \| 90V V(BR)CEO \| 20A I(C) \| STR-5/16 TRANSISTOR \| BJT \| NPN \| 200V V(BR)CEO \| 7.5A I(C) \| STR-1/4 TRANSISTOR \| BJT \| NPN \| 240V V(BR)CEO \| 7.5A I(C) \| STR-1/4 TRANSISTOR \| BJT \| NPN \| 160V V(BR)CEO \| 7.5A I(C) \| STR-1/4 TRANSISTOR \| BJT \| NPN \| 100V V(BR)CEO \| 10A I(C) \| STR-5/16 TRANSISTOR \| BJT \| NPN \| 240V V(BR)CEO \| 6A I(C) \| TO-82 TRANSISTOR \| BJT \| NPN \| 120V V(BR)CEO \| 7.5A I(C) \| STR-1/4 TRANSISTOR \| BJT \| NPN \| 180V V(BR)CEO \| 6A I(C) \| TO-82 晶体管\|晶体管\|叩\| 100V的五（巴西）总裁\|甲一c）\| STR-5/16 晶体管\|晶体管\|叩\| 180V五（巴西）总裁\|甲一c）\| STR-5/16 晶体管\|晶体管\| npn型\| 140伏特五（巴西）总裁\|甲一c）\| STR-5/16 晶体管\|晶体管\|叩\| 50V五（巴西）总裁\| 6A条一c）\|2 TRANSISTOR \| BJT \| NPN \| 100V V(BR)CEO \| 7.5A I(C) \| STR-1/4 晶体管\|晶体管\|叩\| 100V的五（巴西）总裁\| 7.5AI（丙）\|个STR - 1 / 4 TRANSISTOR \| BJT \| NPN \| 60V V(BR)CEO \| 20A I(C) \| STR-5/16 晶体管\|晶体管\|叩\| 60V的五（巴西）总裁\|甲一c）\| STR-5/16 TRANSISTOR \| BJT \| NPN \| 50V V(BR)CEO \| 20A I(C) \| STR-5/16 晶体管\|晶体管\|叩\| 50V五（巴西）总裁\|甲一（c）\| STR-5/16 TRANSISTOR \| BJT \| NPN \| 70V V(BR)CEO \| 20A I(C) \| STR-5/16 晶体管\|晶体管\|叩\| 70V的五（巴西）总裁\|甲一（c）\| STR-5/16	Samsung Semiconductor Co., Ltd. Molex, Inc. Intel, Corp.
2SD2351VWT106 2SD2654VWTL 2SD2226KVWT146 2SD2227SW	Transistors > Small Signal Bipolar Transistors(up to 0.6W) TRANSISTOR \| BJT \| NPN \| 50V V(BR)CEO \| 150MA I(C) \| SOT-346 TRANSISTOR \| BJT \| NPN \| 50V V(BR)CEO \| 150MA I(C) \| SOT-416 Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset	ROHM
DCX69-13 DCX69-16	Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors	Diodes
ZXTC6718MC	Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors	Diodes
ZXTD618MC	Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors	Diodes

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